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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
PA1950
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
DESCRIPTION
The PA1950 is a switching device which can be driven directly by a 1.8 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
PACKAGE DRAWING (Unit : mm)
0.32 +0.1 -0.05
0.65-0.15
+0.1
0.16+0.1 -0.06
2.8 0.2
6
5
4
1.5
FEATURES
* 1.8 V drive available * Low on-state resistance RDS(on)1 = 130 m MAX. (VGS = -4.5 V, ID = -1.5 A) RDS(on)2 = 176 m MAX. (VGS = -3.0 V, ID = -1.5 A) RDS(on)3 = 205 m MAX. (VGS = -2.5 V, ID = -1.5 A) RDS(on)4 = 375 m MAX. (VGS = -1.8 V, ID = -1.0 A)
0 to 0.1
1 2 3
0.95
0.95
0.65 0.9 to 1.1
1.9 2.9 0.2 6: Drain1 1: Gate1 5: Source1
ORDERING INFORMATION
PART NUMBER PACKAGE SC-95 (Mini Mold Thin Type)
Note
4: Drain2 3: Gate2 2: Source2
PA1950TE
Note Marking: TM
EQUIVALENT CIRCUIT
Drain 1 Drain 2
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TA = 25C) Drain Current (pulse)
Note1 Note2 Note2
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
-12 m8.0 m2.5 m7.0 1.15 0.57 150 -55 to +150
V V A A W W C C
Gate 1 Gate Protection Diode Body Diode Gate 2 Gate Protection Diode Body Diode
Total Power Dissipation (2unit) Total Power Dissipation (1unit) Channel Temperature Storage Temperature
Source 1
Source 2
Notes 1. PW 10 s, Duty Cycle 1% 2. Mounted on FR-4 board, t 5 sec. Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. G15620EJ2V0DS00 (2nd edition) Date Published January 2002 NS CP(K) Printed in Japan
(c)
2001
PA1950
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 RDS(on)4 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) VDD = -10 V VGS = -4.0 V ID = -2.5 A IF = 2.5 A, VGS = 0 V TEST CONDITIONS VDS = -12 V, VGS = 0 V VGS = m8.0 V, VDS = 0 V VDS = -10 V, ID = -1.0 mA VDS = -10 V, ID = -1.5 A VGS = -4.5 V, ID = -1.5 A VGS = -3.0 V, ID = -1.5 A VGS = -2.5 V, ID = -1.5 A VGS = -1.8 V, ID = -1.0 A VDS = -10 V VGS = 0 V f = 1.0 MHz VDD = -6.0 V, ID = -1.5 A VGS = -4.0 V RG = 10 -0.45 1.0 105 135 160 225 220 90 40 15 80 150 120 1.9 0.5 0.7 0.86 130 176 205 375 MIN. TYP. MAX. -10 m10 -1.5 UNIT
A A
V S m m m m pF pF pF ns ns ns ns nC nC nC V
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T. RL VGS PG. RG
Wave Form
VGS(-)
0 10% VGS 90%
IG = -2 mA 50
RL VDD
VDD
PG.
90%
VDS(-)
90% 10% 10%
VGS(-) 0 = 1 s Duty Cycle 1%
VDS
VDS
Wave Form
0 td(on) ton
tr
td(off) toff
tf
2
Data Sheet G15620EJ2V0DS
PA1950
TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80
FORWARD BIAS SAFE OPERATING AREA -100
Single Pulse Mounted on 250 mm x 35 m Copper Pad Connected to Drain Electrode in
2
dT - Derating Factor - %
60
ID - Drain Current - A
-10
50 mm x 50 mm x 1.6 mm FR-4 Board d ID (pulse) ite V) im ) L .5 on -4 S( ID (DC) RD GS = (V
-1
PW = 1 ms
10 ms
100 ms 5 s (2 units)
40
-0.1
20
5 s (1 unit)
0
0
30 60 120 90 TA - Ambient Temperature - C
150
-0.01 -0.1
-1
-10
-100
VDS - Drain to Source Voltage - V
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
-10
FORWARD TRANSFER CHARACTERISTICS -100 VDS = -10 V
Pulsed VGS = -4.5 V
-8
-10
ID - Drain Current - A
ID - Drain Current - A
-4.0 V
-6
-1 -0.1 -0.01 -0.001
75C
TA = 125C
-2.5 V
-4
25C
-2
-1.8 V
-25C
-0.0001
0 0.0
-0.2 -0.4 -0.6 -0.8 VDS - Drain to Source Voltage - V
-1.0
-0.00001 0
-0.5
-1.0
-1.5
-2.0
VGS - Gate to Sorce Voltage - V
FORWARD TRANSFER ADMITTANCE Vs. DRAIN CURRENT 100
| yfs | - Forward Transfer Admittance - S
GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE
VGS(off) - Gate to Source Cut-off Voltage - V
-1.5
VDS = -10 V ID = -1 mA
VDS = -10V
10
-1.0
1
TA = 125C 75C 25C -25C
-0.5
0.1
0.0 -50
0
50
100
150
0.01 -0.01
-0.1
-1
ID - Drain Current - A
-10
-100
Tch - Channel Temperature - C
Data Sheet G15620EJ2V0DS
3
PA1950
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 400 VGS = -1.8 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 300 VGS = -2.5 V 250
RDS(on) - Drain to Source On-state Resistance - m
350
300
TA = 125C
RDS(on) - Drain to Source On-state Resistance - m
200
TA = 125C 75C
250
75C 25C
150
25C
200
-25C -0.1 -1 -10
-25C 100 -0.01 -0.1 -1 -10
150 -0.01
ID - Drain Current - A
ID - Drain Current - A
RDS(on) - Drain to Source On-state Resistance - m
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 250 VGS = -3.0 V 200
TA = 125C
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 200 VGS = -4.5 V
150
TA = 125C 75C
150
75C 25C
-25C 100
100
25C
-25C
50 -0.01
-0.1
-1
-10
50 -0.01
-0.1
-1
-10
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 400 ID = -1.5 A VGS = -1.8 V
ID - Drain Current - A
RDS (on) - Drain to Source On-state Resistance - m
RDS (on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE
400
ID = -1.5 A
300
300
200
-2.5 V -3.0 V
200
100
-4.5 V
100
0 -50
0 0
-2
-4
-6
-8
50 100 Tch - Channel Temperature -C
0
150
VGS - Gate to Source Voltage - V
4
Data Sheet G15620EJ2V0DS
PA1950
1000
Ciss, Coss, Crss - Capacitance - pF
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE f = 1 MHz VGS = 0 V
td(on), tr, td(off), tf - Switchig Time - ns
SWITCHING CHARACTERISTICS 1000
td(off) 100 tf tr td(on)
Ciss 100
Coss Crss
10
10 -0.1
-1
-10
-100
VDS - Drain to Source Voltage - V
1 -0.1
VDD = -6.0 V VGS(on) = -4.0 V RG = 10 -1.0 ID - Drain Current - A -10
SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100
-5
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
IF - Diode Forward Current - A
VGS - Gate to Source Voltage - V
ID = -2.5 A VDD = 10 V 6V
10
-4 -3 -2 -1
1
0.1
0.01 -0.4
-0.6
-0.8
-1.0
-1.2
0
0
0.4
VF(S-D) - Source to Drain Voltage - V
1.2 0.8 1.6 QG - Gate Charge - nC
2.0
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 Single Pulse
rth(ch-A) - Transient Thermal Resistance - C/W
Mounted on FR-4 Board of 50 cm2 x 1.1 mm
PD (FET1) : PD (FET2) = 1:0
100
PD (FET1) : PD (FET2) = 1:1
10
1 0.001
0.01
0.1
1 PW - Pulse Width - s
10
100
1000
Data Sheet G15620EJ2V0DS
5
PA1950
[MEMO]
6
Data Sheet G15620EJ2V0DS
PA1950
[MEMO]
Data Sheet G15620EJ2V0DS
7
PA1950
* The information in this document is current as of January, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).
M8E 00. 4

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